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More Info:
Table top rapid thermal annealer capable of processing up to 6� wafers and small samples on a bare Si wafer. Processing can be done under vacuum or at atmospheric pressure using argon, nitrogen, or forming gas. Temperatures up to 800 oC sustained or up to 1000 oC for short intervals.
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Contact Info:
Steve Paolini
LISE G50
11 Oxford Street
Cambridge, MA 02138
617-496-9816
spaolinicns.fas.harvard.edu
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu