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More Info:
This LPCVD TEOS Silicon Dioxide Furnace is a low pressure CVD furnace with a precursor vapor Tetra Ethyl Ortho Silicate, it is capable of processing wafer up to 6" and also smaller samples. Processing gases available are N2, O2 and TEOS.
Comments:
Film thickness of 100nm 1 micron. Pressure 400 mtorr Temperature is 700 - 750'C Index of Refraction 1.42 - 1.47
Contact Info:
John Tsakirgis
LISE G52
11 Oxford Street
Cambridge, MA 02138
617-384-9651
jtsakirgcns.fas.harvard.edu
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu