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More Info:
The LPCVD TEOS Furnace is a low pressure CVD furnace with a 18" flat zone capable of processing up to 6" wafers and smaller samples as well. Process gases available are SiH4 and O2. Thickness to 1 micron Pressure 300 - 375 mtorr Temperature 375'C Index 1.44 - 1.47 Uniformity is 3% over 6".
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Contact Info:
John Tsakirgis
LISE G52
11 Oxford Street
Cambridge, MA 02138
617-384-9651
jtsakirgcns.fas.harvard.edu
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu