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More Info:
The LPCVD Polysilicon is a low pressure CVD furnace with 18" flat zone and capable of processing up to 6" wafers. Process gases available are SiH4, Ar/10% Phos and N2/10% Diborane for insitu doping.
Comments:
Doped and undoped silicon films ranging from Poly to amorphous. Temps from 400'C to 670'C Process pressure 200 - 350 mtorr
Contact Info:
John Tsakirgis
LISE G52
11 Oxford Street
Cambridge, MA 02138
617-384-9651
jtsakirgcns.fas.harvard.edu
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu