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Nanofabrication Facility
 STS PECVD
CNS ID: CVD-3
MakeSurface Technology Systems
Model
CategoryChemical Vapor Deposition
NameSTS PECVD
LocationLISE - Cleanroom G07
 
 
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More Info
Equipment
This STS PECVD system is a dual frequency powered parallel electrode reactor. Its top electrode is powered with two generators. One is a standard rf and also called high frequency power supply (HF, 13.56 MHz). Its power control range is 10W to 600W. The second one is a low frequency (LF, 380 kHz) power supply with a power range of 10W to 1000W. The tool has three operation modes, HF, LF, and MF (mixed frequency). Under MF, the top electrode is powered alternately with HF and LF to tailor film stress by varying the HF/LF power-on ratio. The substrate temperature control is from room temperature to 400C.

Applications
Films that can be deposited using this tool include: SiO2, Si3N4, low-stress Si3N4, amorphous Si, phosphorus and boron doped all above films.

Features
- High and low frequency powered up electrode
- Temperature controlled sample stage up to 400C
- Single wafer loadlock up to 6" wafer
- Available gases: SiH4, NH3, N2O, N2, O2, Ar, 10%PH3/Ar, and 10% B2H6/H2.
- Windows 2000 software control PC
- Internet remote control capability
Comments
STS PECVD Processes

SiO2 Films

Process I
Recipe Name: LFSIO
SiH4: 12 sccm
N2O: 1420 sccm
N2: 392 sccm
Pressure: 550 mTorr
Power: 60W LF
Temperature: Platen at 300C and Lid at 250C
Deposition rate: 79 nm/min
Refractive index: 1.487

Process II
Recipe Name: HFSIO
SiH4: 10 sccm
N2O: 1420 sccm
N2: 392 sccm
Pressure: 900 mTorr
Power: 30W HF
Temperature: Platen at 300C and Lid at 250C
Deposition rate: 56 nm/min
Refractive index: 1.485

Si3N4 Films

Process I
Recipe Name: LFSIN
SiH4: 40 sccm
NH3: 20 sccm
N2: 1960 sccm
Pressure: 550 mTorr
Power: 60W LF
Temperature: Platen at 300C and Lid at 250C
Deposition rate: 45 nm/min
Refractive index: 1.977

Process II
Recipe Name: HFSIN
SiH4: 40 sccm
NH3: 55 sccm
N2: 1960 sccm
Pressure: 900 mTorr
Power: 20W HF
Temperature: Platen at 300C and Lid at 250C
Deposition rate: 10 nm/min
Refractive index: 2.01
 
Contact Info:
Philippe de Rouffignac
LISE G38
11 Oxford Street
Cambridge, MA 02138
617-384-5695
philippecns.fas.harvard.edu
Ling Xie
LISE G52
11 Oxford Street
Cambridge, MA 02138
617-496-9069
lxiecns.fas.harvard.edu
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu
 
 

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