Nanofabrication Facility |
| Savannah Atomic Layer Deposition |
| CNS ID: ALD-1 |
| Make: Cambridge NanoTech |
| Model: S200 |
| Category: Chemical Vapor Deposition |
| Name: Savannah Atomic Layer Deposition |
| Location: LISE - Cleanroom G07 |
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More Info:
The Savannah ALD (Atomic Layer Deposition) from Cambridge NanoTech is a low- to mid-temperature (100-250 C) deposition system that uses surface adsorbtion of single mono-layers of reactive precursor gases to form single atomic monolayers of a variety of insulating and conductive layers, with good uniformity, almost perfect conformality, and minimal heating of substrates.
Deposition rates are typically rather slow, in the range of 3-6 A per minute, but extremely high-aspect-ratio fill (20:1) is easily achievable. The process involves releasing alternating gas pulses of reactive metal-bearing organic precursors and oxidizing secondary precursors such as water, O2, or O3.
Available deposition materials are Al2O3 (aluminum oxide) and HfO2 (hafnium oxide), both using water as the secondary precursor.
A SiO2 (silicon dioxide) process is under development, and platinum will be available after some additional facilitization.
Contact Mac Hathaway (Hathaway@cns.fas.harvard.edu) for training or additional information.
Further technical info can be found here:
http://cambridgenanotech.com/
and an excellent tutorial here:
http://www.cambridgenanotech.com/ald-tutorial.php
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| Contact Info: |
Mac Hathaway
LISE G46
11 Oxford Street
Cambridge, MA 02138
617-495-9012
hathaway cns.fas.harvard.edu |
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu |
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